Emerging two-dimensional (2D) materials offer significant potential for post-silicon photodetectorsbut often fall short of matching silicon photodiode performance. Here, we report a flexible, highperformance photodetector with a simple metal-2D semiconductor-metal structure by stacking Ti/WSe2/Ag layers on a mica substrate. The device demonstrates a low dark current of 0.8 pA, highexternal quantum efficiency of 49%, a broad linear dynamic range of 86 dB, wide spectral sensitivity(350–1200 nm), and ultrafast response speed (~1 μs rise/fall time by conventional measurement and337 ps via ultrafast photocurrent method). These advances originate from efficient photocarrierextraction via an ultrashort channel and Schottky barriers facilitated by van der Waals contacts.Additionally, the device’s ultrathin (~200 nm) profile ensures exceptional bending durability, whileencapsulation protects against ambient degradation. Our strategy here will promote the developmentof the post-silicon photodetector and foster next-generation flexible optoelectronic applications.

- Author (Pusan National University): Ji-Hee Kim (Department of Physics) 

- Title of original paper: Silicon photodiode-competitive 2D vertical photodetector

- Journal: npj Flexible Electronics

- Web link: https://doi.org/10.1038/s41528-025-00386-8 

- Contact email: kimjihee@pusan.ac.kr